| 摘要 |
PURPOSE:To contrive stabilization of characteristics by a method wherein the oxide film, located on the circumference of the metal silicide constituting a Schottky barrier diode, is retreated and a guard ring is formed in the generated gap by performing a self-matching. CONSTITUTION:A thick field oxide film 12 is formed on the circumferential part of an n type Si substrate 10, and after Pt and the like has been sputtered on the surface layer part of the substrate 10 surrounded by the field oxide film 12 while said surface layer part is being covered by a mask, a metal silicide 16 surrounded by the film 12 is formed by performing a sintering process. Then, a cleaning process is performed on the film 12 in the degree wherein the film 12 will be partially thinned off, and the bird's beak generated on the circumference 12a of the film 12 is retreated. Subsequently, p type ions are implanted into the generated gap 10a, and a p type guard ring 18 is formed along the circumference of the silicide 16 by performing a heat treatment. Thus, the formation of the ring 18 is simplified, and the diode having stabilized characteristics can be obtained. |
