| 摘要 |
PURPOSE:To provide an opening part with a resist pattern, which is smaller than the width of an opening part of the first resist layer, without using an electron beam exposure technique or the like, by radiating far ultraviolet rays toward the inside from the surface side of the second resist layer, to perform a developing process. CONSTITUTION:An opening part 14 of 0.7mu or so in its opening width 13 is selectively formed inside the first resist layer 12, and the second resist layer 15 is formed on the first resist layer 12 and inside the opening part 14 so that the recessed part 16 is provided on the surface near the opening part 14. Then, while far ultraviolet rays are radiated wholly from the outside to the inside of the second resist layer 15 so that the second and first resist layers 12 and 15 are exposed, a lens effect on the farrecessed part 16 causes the value of exposure in the region 18 to be larger compared to that in the other part. The lens effect on the radiation of far ultraviolet rays causes the vicinity of the resist pattern left (to be made) to be strongly exposed, the part of exposure is removed on the next process of developing. |
