| 摘要 |
PURPOSE:When a compound single crystal is allowed to grow by the liquid- sealed Chokralsky method, the melted feedstock is passed a through-hole opened in a specific part into the crucible for growing the crystal to prevent the increase of transition density in the center and periphery of the single crystal and development of cell growth. CONSTITUTION:When a compound single crystal such as GaAs, GaP, InP or InAs is allowed to grow by the liquid-sealed pulling-up method, a ring heater 7 is set in the oven chamber 10 and the single crystal growth unit which is composed of the refractory inner crucible 1 and the outer crucible 5 is placed in the heater. The In melt 4 is charged in the inner crucible 1 an the GaAs melt 4' is charged in the outer crucible 5 and the surfaces are sealed with a liquid sealant 6. At the same time, a through-hole 2 is opened at the bottom of the inner crucible 1 at the position corresponding to the intermediate point between the center and periphery of the growing GaAs single crystal. The concentration of In4 becomes high at the center and the periphery and low near the through hole 2 by influence of the GaAs4' flowing in from the hole 2. Thus, a single crystal almost free from phase transition is obtained.
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