| 摘要 |
PURPOSE:To prevent disconnections at a stepped section on the surface of a semiconductor device and the increase of resistance, and to improve reliability on connections by detecting the stepped section, changing the power of radiation and scanning speed of laser lights in the stepped section and increasing the thickness of the precipitating film of an additional wiring when the wiring is formed additionally in laser CVD and wirings in the semiconductor device are connected. CONSTITUTION:A shutter 25 is opened and laser lights 7 are converged and radiated to a semiconductor device 1, a fixed time passes, an X-Y stage 28 is moved and laser lights 7 are scanned relatively. When the amount of light at a measuring point 30 exceeds a threshold RS (the X-Y stage reaches the positions of X1, X3, X5), a picture processor 21 decides the presence of irregularities (a stepped section), and transmits the position of the irregularities over a controller 23. The detection of the stepped section and the alteration of the power of radiation of laser lights 7 and scanning speed are repeated, and the stage proceeds to the position of the end of laser radiation. When the X-Y stage reaches the position of the end of laser radiation, the stage 28 is stopped, a fixed time passes, a signal is transmitted over the shutter 25 from the controller 23, and laser radiation is suspended, thus connecting one pair of wirings 4 in the semiconductor device 1.
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