发明名称 SEMICONDUCTOR DOPANT VAPORIZER
摘要 <p>Apparatus and methods for introducing ion source material (400) into an ion source. A vaporizer unit (200) which is removable from the system is prepared for insertion into the ion implant equipment outside the system. It is cleaned, a new vial (400) of ion source material is introduced and it may be preheated to degas it or to prepare it for use in the system. The vaporizer unit which is currently in use is removed, to be cleaned and recharged, and the previously prepared vaporizer unit is inserted, sealed in place and the vacuum established. The ion implant system is, then, ready to resume operation with minimal down time. The vaporizer unit comprises a vaporizer block (200) of hight heat conductive material such as copper which includes three cavities or wells. One cavity contains a heater, one a gas flow path for heating (240) and/or cooling (230), and one contains a sealed vial of semiconductor dopant. Wells (222) for temperature sensors are also provided, as are means (310) for breaking or puncturing the vial once the ion implant system is ready for operation. The evaporator block is mounted, when in use, in the vacuum chamber of the ion implant device, and is connected through gas-tight seals with a face plate (100) which forms a seal closing the vacuum chamber and supporting the vaporizer block. An external operator (148) is provided for transmitting movement into the system for breaking the vial at the desired time.</p>
申请公布号 WO1987006389(A1) 申请公布日期 1987.10.22
申请号 US1986000737 申请日期 1986.04.09
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