In a semiconductor integrated circuit device, a dielectric insulating substrate (3) is used in which a silicide layer (40) is provided between a single-crystal semiconductor island region (1) and a thin dielectric layer (2). One of the electrodes is connected to the silicide layer (40) which serves as conductor. The collector resistance of a transistor formed in a single-crystal semiconductor island region (1) can be reduced without the size of the island region having to be increased. <IMAGE>
