| 摘要 |
1. Field effect transistor having a Schottky gate and comprising as carried by a highly resistive substrate (1) an active layer (2) and two access electrodes (3, 4) referred to as source and drain, the control region of which comprises a plurality of tunnels (10, 20, 30) connecting within the active layer (2) the region located beneath the source electrode (3) and the region located beneath the drain electrode (4), these tunnels being formed by means of a plurality of grooves (9) which are worked into the active layer (2) and have a depth (p) exceeding the thickness (e) of the latter, the gate electrode (7) being formed by a metallic strip deposited onto the tunnels (10, 20, 30) and in the grooves (9), this field effect transistor being characterized in that at least two of these tunnels (10, 30) have different lengths ("l"1 , "l"3 ) and have different threshold voltages (VT ). |
