| 摘要 |
PURPOSE:To obtain a transistor having LDD structure having uniform characteristics by a method wherein a gate-electrode wiring is formed, an impurity is doped to a source and a drain thinly and shallowly, a thick oxide film is shaped equally to the side of a gate electrode through low-temperature wet oxidation and an impurity is doped thickly to the source and the drain. CONSTITUTION:Field oxides 2 are shaped partially on a P-type substrate 1, a gate oxide film 3 is formed, a gate electrode film is shaped, and a gate- electrode wiring 4 is formed through a photoetching process. Phosphorus is doped thinly and shallowly from the upper section of the gate-electrode wiring 4 through ion implantation, and N-type diffusion layers 5 are shaped. An SiO2 film 6 is formed thickly on the side of the gate-electrode wiring 4 through wet oxidation in concentration at approximately 750-950 deg.C. Arsenic ions are implanted thickly from the upper section of the film 6, thus shaping a transistor having LDD structure.
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