发明名称 NONVOLATILE INTEGRATED CIRCUIT MEMORY
摘要 An integrated circuit memory (10) has row lines (RL); select lines (SL); output lines (BL); and memory cells (14) arranged in pairs (17). Each pair of memory cells (14) has common outputs (32) coupled to a selected one of the output lines (BL) and common address inputs (31) coupled to a selected one of the row lines (RL). Ambiguity of which memory cell (14) of the pair (17) of memory cells (14) is to be selected, both being coupled to a selected one of the row lines (RL) and a selected one of output lines (BL), is determined by two selected select lines (SL) coupled thereto. A first decoder (100,120), responsive to an input address (A0-Am-1), enables a selected one of the row lines (RL), and a second decoder (100,130,140), responsive to the row lines and to the input address, enables a selected one of the select lines (SL) which corresponds to pairs (17) of memory cells (14) with an enabled row line (RL).
申请公布号 JPS62241370(A) 申请公布日期 1987.10.22
申请号 JP19860316117 申请日期 1986.12.24
申请人 RAYTHEON CO 发明人 JIYUNICHI SANO;MOOSHIE MAJIN;RANSU EI GURATSUSAA
分类号 H01L27/112;G11C17/12;G11C17/18;H01L21/8246;H01L21/8247;H01L27/10;H01L27/115 主分类号 H01L27/112
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