发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To manufacture a ceramic sealed semiconductor device with high airtightness and excellent reliability by a method wherein the surface of an Al layer sticked to a semiconductor pellet or wafer is processed with oxygen plasma to be formed into an alumina film which is used to fix the semiconductor or pellet to a protective case. CONSTITUTION:An Al layer 2 is formed on the back surface of a semiconductor pellet 1 with a circuit pattern formed of a semiconductor element on the surface thereof and then the surface of Al layer 2 is plasma-processed at low temperature to form an alumina film 5. On the other hand, a low melting point glass 4 is sticked on the pellet fixing part of a ceramic case 3. In such a constitution, the Al layer 2 with the aluminium film 5 in even thickness and the low melting point glass 4 are reacted to fix the semiconductor pellet 1 to the ceramic case 3.
申请公布号 JPS62242332(A) 申请公布日期 1987.10.22
申请号 JP19860085750 申请日期 1986.04.14
申请人 NEC CORP 发明人 SAITO AKITOSHI
分类号 H01L21/52 主分类号 H01L21/52
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