VERFAHREN ZUR ENTFERNUNG VON FILM VON DENDRITISCHEN STRANG-SILIZIUM

摘要

Method of removing film formed on dendritic web silicon during growth. The web is heated to 800 to 1200 DEG C in the presence of wet or dry oxygen, which results in the formation of a coating of silicon dioxide on the web underneath the film. The web is then immersed into a solution of hydrofluoric acid which lifts the film off the web, resulting in a clean surface that is acceptable for processing into solar cells.