| 摘要 |
PURPOSE:To accurately evaulate the semi-insulating substrate by injecting ions not electrically activated into the substrate, heat treating it, removing the ion injected region by etching and determining whether the new surface is semi-insulating or not. CONSTITUTION:The ions 2 not electrically activated are injected to the semi-insulating GaAs crystalline substrate 1 in the substrate formed, for example, of Ar, and a lattice fault region 3 is formed on the surface of the substrate. In order to prevent the external diffusion of the As from the substrate 1, an Si3N4 film 4 is covered as a protective film thereon, heat treated, then the film is removed, is etched, and the etched part 6 of the substate 1 is formed with the lattice fault region 5. The etching process at this time depends upon the ion injecting conditions. It is inspected whether the new surface thus formed is semi-insulating or not so as to accurately evaluate the propriety of the substrate. |
