| 摘要 |
PURPOSE:To exactly prevent the first layered photoresist film from being dissolved, by radiating far ultraviolet rays on the surface of the first layered photoresist film before the second layered photoresist film is formed after the first layered photoresist film being formed. CONSTITUTION:When the first layered photoresist film 2 is formed on the surface of an oxidizing film, a posi-type photo resist in an optical decomposition type is used as a photoresist. Then, when a mask 3 having a required pattern is put on the surface of the film 2 and an optical exposure is performed by radiating ultraviolet rays or the like and then the mask 3 is removed to perform developing, the film 2 etched according to the required pattern. Then, when far ultraviolet rays L having composite wavelengths of, e.g., 254 nm or near are radiated on the surface of the film 2 so that optical bridging reaction occurs on the surface, a high molecular layer 4 is formed on a reflection region. Then, after post-baking of the film 2, a photoresist film 5 is formed as the second layer. Hence, the first layered photoresist film is exactly prevented from being peeled due to an organic solvent existing in the second layered photoresist film. |
