| 摘要 |
PURPOSE:When a single crystal of III-V compound semiconductor is allowed to grow by the liquid-sealed pulling-up method, the growing single crystal ingot is irradiated with X-ray on its surface and the Brag's reflection is monitored to effect early detection of crystal defects to increase the yield of single crystals. CONSTITUTION:When a single crystal of III-V compound such as GaAs is pulled up from the polycrystalline melt 16, the melt is sealed with a sealant such as diboron trioxide 17, the seed crystal 18 of GaAs is dipped and gradually pulled up to allow the single crystal of GaAs to grow on the end. At this time, X-ray beam is projected to the surface of the single crystal 19 in the sealant 17 to monitor the Brag's reflection with the detector 26. When the crystal defects such as poli, twin or the like are detected, the defect parts are melted again in the GaAs melt and pulled up again. Thus, single crystals of III-V compound semiconductor such as GaAs of good quality is always obtained with extremely reduced defects.
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