| 摘要 |
PURPOSE:To improve precision in position-alignment, by performing positionalignment by the use reflected light, which is a part of exposing lights, coming from a position-alignment pattern of an exposed material. CONSTITUTION:Position-alignment light 11a emitted from a position-alignment light source 10 is irregularly reflected on a position-alignment referential pattern which is imaged on a wafer 6, and a part 11d of the irregular reflecting light passes through a pattern reflecting lens 5 to be projected on a position 13 of a mask 4. On the other hand, the position-alignment referential pattern is pictured on the mask 4. While both the patterns are concurrently compared by photodetector 12a and 12b, positionalignment of patterns on the wafer 6 and the mask 4 is roughly adjusted. Then, with optical exposing laser light from an Excimer laser generator being used, the position-alignment referential pattern on the wafer 6, which is imaged on the mask 4, is made to pass through a beam splitter 3, as a reflected image shaped in overlapping of the image on the mask and the wafer, and to be enlarged by an enlarging lens 7 and be detected by means of a fine-adjustment photodetector 8. |
