| 摘要 |
PURPOSE:To form a fine gate electrode by shaping a spacer, leaving one part of a third insulating film on the side wall surface of a second insulating film, removing the spacer, etc., using a mask layer formed on the upper surface of the prearranged section of the gate electrode as a mask and controlling the thickness of the spacer. CONSTITUTION:A CVD oxide film 5 is etched gradually from the surface through reactive ion etching such as anisotropic plasma etching, and etched so that the CVD oxide film 5 is left on the side wall of an silicon oxide film 4, thus forming a spacer 5'.A mask layer such as a tungsten film 6 as a high melting-point metallic film is shaped selectively on the upper surface of polysilicon 3 exposed except the CVD oxide film 5. The silicon oxide film 4, the polysilicon film 3 and a thin oxide film 2 are etched selectively in succession, employing the tungsten film 6 as a mask, thus forming a gate electrode 3'. Accordingly, the width of the gate electrode 3' takes a value obtained by subtracting the thickness of the spacer 5' left on the side wall from the width of the selectively removed silicon oxide film 4.
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