SEMICONDUCTOR LASER FABRICATION

摘要

A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition AlxGal-xAs of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition InyGa1-yAs on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition AlxGal-xAs and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.