| 摘要 |
PURPOSE:To obtain the titled uniform-quality polycrystal deposited film by previously arranging a material to be made into the crystal nucleus of the deposited film on a substrate, supplying a gas to etch the deposited film, irradiating light energy to selectively enhance the etching activity, and growing a crystal having a specified facial direction. CONSTITUTION:An active species A formed by the decomposition of a compd. (e.g., SiF4) contg. Si and a halogen and the following active species B are separately introduced into a space for forming an Si deposited film on a substrate of glass, etc., and both species are allowed to interact chemically with each other to form the Si deposited film on the substrate. The active species B is an active species formed from a film forming chemical substance (e.g., gaseous H2) which interacts chemically with the active species A. The material to be made into the crystal nucleus of the deposited film is previously arranged sporadically on the substrate surface in case of forming the deposited film, a gas, etc., (e.g., gaseous F2) etching the deposited film are supplied, energy emitted form a mercury lamp, etc., is irradiated, and the etching activity on the deposited film is selectively enhanced.
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