发明名称 POSITIVE TYPE RESIST PATTERN FORMING METHOD
摘要 PURPOSE:To enhance sensitivity and resolution to electron beams and X-rays by using a polymer composed of specified repeating units as a resist material. CONSTITUTION:The polymer to be used as the resist is composed of the repeating units represented by formula I in which R1 is methyl, fluorinated methyl, or the like; R2 is 3,5-difluorophenyl or the like; each of R3 and R4 is H, alkyl, or the like; and R5 is optionally fluorinated phenyl. This polymer is obtained by homopolymerizing alpha-substituted acrylate represented by formula II, which is obtain by reacting an alpha-substituted acrylic acid with a chlorinating agent, such as thionyl chloride, phosphorus pentachloride, or oxalyl chloride to synthesize the alpha-substituted acryloyl chloride, and further reacting it with alcohol having a benzene ring and containing an fluorine atom in the presence of a base, thus permitting the obtained resist material to be enhance in sensitivity and resolution to electron beams and X-ray, and superior in dry etching resistance.
申请公布号 JPS62240956(A) 申请公布日期 1987.10.21
申请号 JP19860307702 申请日期 1986.12.25
申请人 TOSOH CORP 发明人 TSUTSUMI YOSHITAKA;KIYOTA TORU;AKEYAMA HIDEO;MATSUMURA KOUZABUROU;NAKAZAWA KEIKO
分类号 G03F7/26;C08F20/22;G03F7/039 主分类号 G03F7/26
代理机构 代理人
主权项
地址