| 摘要 |
PURPOSE:To precisely control the formation or etching of a thin film on an atomic level by colliding charged particles with a target or a substance to be etched while irradiating light, or irradiating light on the atom liberated from the target by the charged particles. CONSTITUTION:A target 4 consisting of polyethylene trifluoride is firstly fixed to a supporting member 2 in a vacuum vessel 1 in case of forming a polyacetylene fluoride thin film, and a substrate 5 made of stainless steel is further fixed to a substrate supporting member 3. The inside of the vacuum vessel 1 is then evacuated to a specified vacuum, and then an inert gas 9 is introduced 9A into the vessel 1. A high-frequency voltage is impressed in the vessel 1 from a high-frequency power source 2C, the inert gas pressure in the vessel 1 is adjusted 8A, and plasma is generated. A shutter 6 is closed while the plasma is generated, the target 4 is etched, and IR rays are irradiated on the target 4 or into the plasma gas atmosphere by a light irradiation device 12. The cutting rate of the C-F coupling of the target 4 is increased, and the forming rate of a thin film can be increased.
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