| 摘要 |
<p>A process for forming a deposited film comprises the steps of: (a) preparing a substrate for deposited film formation by selectively irradiating the surface of a base member with an energy beam of an electromagnetic wave or electron beam through atmosphere of a reactive gas or a gas having etching action to provide regions where crystal nuclei are selectively formed scatteringly on the surface; (b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into a film forming space in which said substrate is previously arranged to effect chemical reaction therebetween; and (c) introducing into saiid film forming space during the film forming step (b) a gaseous substance (E) having etching action on the deposited film to be formed or a gaseous substance (E2) capable of forming the gaseous substance (E) and exposing the deposited film growth surface to the gaseous substance (E) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.</p> |
