发明名称 |
Unframed via interconnection with dielectyric etch stop. |
摘要 |
<p>A layer of aluminum oxide or other insulative metal oxide is employed as an etch stop in the fabrication of very large scale integrated circuit devices. The use of such etch stops permits fabrication of unframed or borderless via openings and correspondingly permits greater metallization line pitch, smaller circuit features, and more reliable interlayer electrical contact. A method for insulative metal oxide deposition is also described.</p> |
申请公布号 |
EP0241729(A2) |
申请公布日期 |
1987.10.21 |
申请号 |
EP19870103759 |
申请日期 |
1987.03.16 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KIM, MANJIN JEROME;GRIFFING, BRUCE FREDERICK;SKELLY, DAVID WILLIAM |
分类号 |
H01L21/3213;H01L21/302;H01L21/3065;H01L21/311;H01L21/316;H01L21/768;(IPC1-7):H01L21/90 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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