发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To improve the wear resistance of a synthetic resin body by forming the film consisting of silicon oxide on the body which has been applied with sputtering etching in the low-voltage discharge atmosphere of an inactive element as the pretreatment, and firmly depositing a silicon oxide film on the surface of the synthetic resin body. CONSTITUTION:The synthetic resin body 11 is fixed to a substrate holder 3, the inside of a treating vessel 1 is evacuated, and the pressure in the vessel 1 is regulated by introducing 8 an inert gas such as Ar. A voltage is then impressed on the holder 3 to form electric discharge conditions, the inert gas is struck against the surface of the resin body 11 to cut the high molecular chain of the resin body 11, and a radical is formed. A voltage is then impressed on an SiO2 target 2 to generate sputter discharge between the resin body 11 and the target 2. The alcohol droplets remaining on the resin body 11 is blown off by dry gaseous N2 to clean the surface. The resin body 11 is then fixed to a substrate holder in the treating vessel of a magnetron type sputtering device, and the film of silicon oxide is formed on the surface of the resin body 11 by an ordinary method.
申请公布号 JPS62240762(A) 申请公布日期 1987.10.21
申请号 JP19860084596 申请日期 1986.04.11
申请人 TOYOTA CENTRAL RES & DEV LAB INC 发明人 KAGEYAMA YASUYUKI;TAGA YASUNORI
分类号 C08J7/00;C08J7/06;C23C14/02;C23C14/08;C23C14/34 主分类号 C08J7/00
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