发明名称 |
Fabrication of semiconductor devices utilizing patterned metal layers. |
摘要 |
<p>This invention relates to a method of fabricating semiconductor devices, which includes growing patterned metal layers. Patterned metal growth is obtained on a substrate by illuminating the substrate in the presence of a metal containing molecule adsorbed on the substrate. After initial illumination, the photoreacted molecules catalyze further metal growth without further illumination.</p> |
申请公布号 |
EP0241873(A2) |
申请公布日期 |
1987.10.21 |
申请号 |
EP19870105317 |
申请日期 |
1987.04.10 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
HIGASHI, GREGG SUMIO |
分类号 |
C23C16/06;C23C16/48;C23C20/04;H01L21/285;H01L21/3205 |
主分类号 |
C23C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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