发明名称 |
Process for removing contaminant from holes. |
摘要 |
<p>Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.</p> |
申请公布号 |
EP0241718(A2) |
申请公布日期 |
1987.10.21 |
申请号 |
EP19870103635 |
申请日期 |
1987.03.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
EGITTO, FRANK DANIEL;EMMI, FRANCIS;MLYNKO, WALTER EUGENE;SUSKO, ROBIN ANNE |
分类号 |
B08B3/08;H01L21/302;H01L21/304;H01L21/3065;H05K3/00;H05K3/08;H05K3/26;H05K3/42 |
主分类号 |
B08B3/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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