| 摘要 |
PURPOSE:To prevent the breaking of wires and a short circuit between adjacent wiring, by adding, together with B and N, specific amounts of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W to Al containing elements having an electromigration- preventing effect, such as Cu, etc. CONSTITUTION:0.0001-0.02% one or more alloying elements M by weight, among Cu, Co, Mn, Ni, Sn, In, Au, and Ag, 0.002-0.7% of one or more alloying elements Me among Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W, 0.002-0.5%, respectively, of B and N, and, if necessary, 0.5-1.5% Si are added to Al. In the above composition, when the additive quantities of the elements B, N, and Me are less than the above ranges, B, N, and Me perfectly enter into solid solution in Al or Al-Si alloy and so MeBx and MeNx are not precipitated and, when they exceed the above ranges, electric resistance is increased. This alloy is used as wiring material for semiconductor device in sputtering and vacuum deposition and is effective in preventing hillock formation as well as electromigration. |
