摘要 |
PURPOSE:To prevent the breaking of wires and a short circuit between adjacent wirings, by incorporating, together with N, specific amounts of Ti, Zr, Hf, V, Nb, Ta, and Cr to Al containing elements having an electromigration- preventing effect, such as Cu, etc. CONSTITUTION:0.0001-0.2% by one or more alloy elements M by weight, among Cu, Co, Mn, Ni, Sn, In, Au and Ag, 0.002-0.7% of one or more alloying elements Me among Ti, Zr, Hf, V, Nb, Ta, and Cr, 0.002-0.5% N, and, if necessary 0.5-1.5% Si are added to Al. In the above composition, when the additive quantities of elements N and Me are less than the above ranges, N and Me perfectly enter into solid solution in Al or Al-Si alloy and MeNx is not precipitated and, when they exceed the above ranges, electric resistance is increased. This alloy is used as wiring material for semiconductor device in sputtering or vacuum deposition and is effective in preventing electromigration and hillock formation. |