FORMATION OF ETCHING MASK PATTERN

摘要

PURPOSE:To simplify the forming stages and to improve the forming efficiency and accuracy by forming a layer or a material different from a material to be etched on the surface of the material and by selectively irradiating high energy beams on the layer so as to partially remove the layer. CONSTITUTION:A layer of a material different from a material 4 to be etched on a substrate 2 is formed on the surface of the material 4. High energy beams 8 are selectively irradiated on the layer and this layer is partially removed to form an etching mask 6' whose material is different from the material 4 to be etched.