发明名称 |
Light emitting semiconductor device |
摘要 |
In a carrier injection type light emitting semiconductor device with a QW structure, a p-type impurity doped layer and/or an n-type impurity doped layer are inserted into an optical wave guide layer so as to cancel an internal electric field in an active region.
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申请公布号 |
US4701774(A) |
申请公布日期 |
1987.10.20 |
申请号 |
US19850810093 |
申请日期 |
1985.12.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MCILROY, PAUL W. A.;KUROBE, ATSUSHI;FURUYAMA, HIDETO |
分类号 |
H01L33/06;H01L33/14;H01L33/30;H01S5/00;H01S5/30;H01S5/34;H01S5/343;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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