| 摘要 |
<p>PURPOSE:To form a channel whose width is narrower than that of an electrode at the time of adopting self-alignment applying a lift-off method, by making up a gate electrode of a metal film and a transparent conductive film whose width is made wider than that of the metal film. CONSTITUTION:On an insulative substrate 21, a gate electrode 22 is formed, which is composed of a metal film 22a and a transparent conductive film 22b whose width is made wider than that of the metal film. Then the following are formed thereon; i.e. a gate insulating film 23, a semiconductor layer 24, high-doping layer 24a and a resist 36. A light L is made to irradiate from under the substrate 21. Thereby, leaving the resist 36 of a part corresponding to the metal film 22a, the resist of both sides thereof is eliminated. After a metal film 37 is deposited on the whole surface, the resist 36 is eliminated. As the result of this, the metal film 37 on the resist 36 is eliminated at the same time by a lift-off method, and a source electrode 25, a drain electrode and a channel part 27 whose width is narrower than that of the gate electrode 22 are formed.</p> |
