| 摘要 |
A semiconductor dynamic read/write memory device contains an array of rows and columns of one-transistor memory cells, with a differential sense amplifier for each column of cells. The sense amplifier has a pair of balanced bit lines extending from its inputs, in a quasi-folded bit line configuration. The memory cells are not directly connected to the bit lines, but instead are coupled to bit line segments. The row address selects a cell to be connected to a segment, and also selects one of the two segments to be connected to one of the two bit lines. Instead of being interleaved one-for-one, the word lines for cells to be connected to the two bit lines are in groups one group for each segment line; the groups are interleaved. The combined segment line and bit line capacitance has a more favorable ratio to the storage capacitance, compared to the one-for-one interleaved layout.
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