发明名称 BASE DRIVE CIRCUIT FOR POWER TRANSISTOR
摘要 PURPOSE:To prevent the circuit malfunction after power-off by inserting a diode between a base of a driven transistor (TR) and a reverse bias supply TR collector while the anode is directed toward the driven TR. CONSTITUTION:The diode 12 is connected between the base of a TR 11 and a collector of a TR 10 while the anode is directed toward the base of the TR 11. After power-off, even when the reverse bias power supply is made turned off, the bypass from the forward bias power supply to the driven TR 11 is prevented by the diode 12 and the possibility of mistriggering the TR 11 is precluded.
申请公布号 JPS62239613(A) 申请公布日期 1987.10.20
申请号 JP19860082822 申请日期 1986.04.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 ITO TOMOTAKA
分类号 H02M1/00;H03K17/60 主分类号 H02M1/00
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