| 摘要 |
PURPOSE:To improve the step coverage of an Al wiring and to upgrade the moisture resistance by a method wherein an SiO2 film formed by a decompression CVD method is used on the Al wiring as an interlayer insulating film and a silica coated film is formed on the SiO2 film. CONSTITUTION:An SiO2 glass film 103 of 6000Angstrom or more and 10000Angstrom or less is fomred on an Al wiring 102 as an interlayer insulating film by a decompres sion CVD method. A silica coated film 104 is formed on the glass film 103. Thereby, the step coverage of the Al wiring is improved and the moisture resistance is upgraded.
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