| 摘要 |
PURPOSE:To measure the lithographic pattern with excellent accuracy by a method wherein an electron beam lithography equipment is provided with functions of an electron microscope changing the focal length of electromagnetic lenses. CONSTITUTION:In a lithographic mode, the corner part of the first shaping aperture 3 is irradiated with an electron beam 17 of an electron gun 1. A specimen 9 is irradiated with the image of the first shoping aperture 3 through the intermediary of a lens 4, the second shaping aperture 6, another leans 4, etc., the size of the image being reduced to a specified one. An aperture forming and deflecting controller 13, a blanking controller 14, a deflecting controller 15 lithograph a specified figure on the specimen 9 using lithographic pattern data from a CPU 16. In a measurement mode, an aligner 2 is controlled to make the electron beam 17 pass through the first shaping aperture 3. Furthermore, the lens 4 and a controller 12 are controlled to form the image of electron gun on the specimen 9 as a spot beam. The deflection controller 15 is controlled to scan the pattern 10 lithographed on the specimen 9 so that the dimensions or position may be measured by the signals such as reflected elecrons or the like produced by the scanning process.
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