| 摘要 |
PURPOSE:To detect the withstand voltage of electrostatic breakdown of a MOSFET even under the manufacturing process according to the measurement of electorstatic withstand voltage of a checking element, by providing the checking element of MOS structure applying an oxide film formed in the similar manner to the gate oxide film of a MOSFET. CONSTITUTION:A MOSFET is made up as follows; i.e. source-drain regions 34 and 35 are formed on an n-type Si substrate 31, and respective Al electrodes 37 are formed for the respective regions. A gate oxide film 32 under the gate electrode 36 of the MOSFET part and an oxide film 33 under the Al electrode 37 of a checking element part are formed in the same process, and their thick ness and quality are quite the same to each other. Consequently, the dielectric strength of the gate oxide film of the MOSFET can be measured by employing said checking element.
|
