发明名称 |
Process for forming MOS transistor with buried oxide regions for insulation |
摘要 |
MOS process for forming field-effect devices in self-alignment with a buried oxide region. Oxygen is implanted in alignment with masking members after gates have been defined from the masking members. The masking members block the oxygen implantation and thus the channel regions of subsequently formed transistors are self-aligned with openings in the buried oxide layer.
|
申请公布号 |
US4700454(A) |
申请公布日期 |
1987.10.20 |
申请号 |
US19850794524 |
申请日期 |
1985.11.04 |
申请人 |
INTEL CORPORATION |
发明人 |
BAERG, WILLIAM;TING, CHIU H.;SIU, BYRON B.;TZENG, J. C. |
分类号 |
H01L21/265;H01L21/762;H01L21/8238;(IPC1-7):H01L21/265;H01L21/16;H01L21/28;H01L21/316 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|