发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To provide a chemical resistance for a metallic silicide of low chemical resistance by forming a carbonized metal film above a silicide film in a semiconductor device using a metallic silicide. CONSTITUTION:A carbonized metal film 3 and a metallic silicide film 2 are formed on a semiconductor substrate 1 in order from the surface. As the carbonized metal film, titanium carbide which has a low specific resistance and a high resistance to hydrofluoric acid is used. Thus, the metallic silicide film 2 can be provided with a resistance to hydrofluoric acid without causing an increase in resistance.
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申请公布号 |
JPS62239576(A) |
申请公布日期 |
1987.10.20 |
申请号 |
JP19860082030 |
申请日期 |
1986.04.11 |
申请人 |
HITACHI LTD |
发明人 |
SUZUKI TADASHI;KASHU NOBUYOSHI;OYU SHIZUNORI |
分类号 |
H01L29/43;H01L21/28;H01L29/78 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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