| 摘要 |
PURPOSE:To form thin films with even thickness and even impurity concentration by a method wherein, within a diffusion furnace type low pressure thin film forming device, a reactive tube is three layer tube structured while doping gas is evenly led in through pores near wafers. CONSTITUTION:Within diffusion furnace type low pressure thin film forming device, a reaction tube is three layer tube structured. The three layer tube is composed of the first reaction tube 1 positioned on the outermost shell to maintain the pressure not exceeding the atmospheric pressure the second reaction tube 2 positioned on the inner part of the reaction tube 1 and the third reaction tube 3 to be a substantial reactive region forming thin films above wafers 5. Doping gas led in the space between the reaction tubes 2 and 3 is further led in the reaction tube 3 through the pores made in the reaction tube 3. Through these procedures, thin films with even thickness and even impurity concentration can be formed.
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