| 摘要 |
A solid state image sensor, in which the same gate voltage is applied through a gate insulating layer to a channel area and an over-flow control gate area, both provided in a semiconductor substrate, is disclosed. In this case, the substrate concentration adjacent the area beneath the over-flow control gate area is made different from that adjacent the area beneath the channel area to reduce the gate voltage dependency of the potential at the over-flow control gate area as compared with that at the channel area, whereby the maximum handling charge upon the charge transfer mode is made more than that upon the light receiving mode. |
