摘要 |
PURPOSE:To increase the deposition velocity of a film without deteriorating film quality by forming a recess groove on the surface of an electrode impressed with high-frequency voltage and providing a magnetic field formation device which forms a magnetic field rectangularly crossing to a high-frequency electric field in the recess groove. CONSTITUTION:After adjusting the inside of a vacuum vessel to required gas composition, the flow rate of gas and pressure by means of both an introduction device 2 for reaction gas and an exhaust device 3, high-frequency voltage is impressed to a high frequency impressing electrode to generate glow discharge between it and a grounded electrode 5. In such a case, electrons generated in plasma are trapped by a magnetic field rectangularly a crossing to the high-frequency electric field which is formed by a magnetic field formation device 12 in the recess groove 11 of the electrode 4 and a plasma region extremely high in electron density is formed in this recess groove 11. Therefor the decomposition of reaction gas is promoted in the recess groove 11 and a film is high-speedily formed in the part on a base plate 8 of the grounded electrode 5 wherein the part is opposed to the recess groove 11. Further the distance of the base plate 8 for the plasma region in the recess groove 11 is freely adjusted by transferring the grounded electrode 5 by means of a positioning device 13. |