发明名称 DEVICE FOR FORMING CVD THIN FILM
摘要 PURPOSE:To prevent the flake of fine particles of a foreign material from being formed and stuck on inside wall faces by respectively providing a cooling means on respective outside wall faces of a conical cover, a partition wall and an intermediate ring and cooling them at temp. lower than the temp. starting film formation reaction. CONSTITUTION:Cooling means 14, 15, 16 are respectively provided on respective outside wall faces of a conical cover 3 which covers a conical cover 2 for controlling a flow pattern of reaction gas introduced into the inside of a furnace, the partition wall 13 which is joined to the lower end part of the conical buffer 2 and provided to the lower part of a heating means 10 and an intermediate ring 12 which is connected and closed to the lower part of the conical cover 3. Further as the respective cooling means, a method circulating a liquid refrigerant such as cooling water or a compressed gas-like refrigerant through the space thereof can be used. Thereby the surface of a part unnecessary directly to the heating of a wafer 6 is cooled at the temp. starting film formation reaction and below and the flake of fine oxide particles is prevented from being formed and stuck and the degree of utilization of reaction gas is enhanced.
申请公布号 JPS62238367(A) 申请公布日期 1987.10.19
申请号 JP19860079074 申请日期 1986.04.08
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 OOYAMA KATSUMI;HIKIMA HITOSHI;TANIGUCHI KAZUO;MURAKAWA YUKIO;TAKAMI KATSUMI
分类号 H01L21/205;C23C16/40;C23C16/44;C23C16/455;H01L21/31 主分类号 H01L21/205
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