| 摘要 |
To bond shaped parts of pressureless-sintered SiC or hot-pressed SiC, a layer having a maximum thickness of 1 mu m comprising at least one carbide- and/or silicide-forming element selected from the group consisting of Ag, Al, Au, B, Be, Co, Cr, Cu, Fe, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Ta, Ti, V, W and Zr is applied to at least one of the polished matching faces. The parts are placed together and then welded to one another in an inert or reducing atmosphere, the temperature, pressing pressure and treatment time being matched to take into account the material of the </= 1 mu m layer. The process is preferably carried out using pressing pressures from 15 to 45 MPa, in particular about 25 MPa, at temperatures between 1500 and 1800 DEG C and using a pressing duration between 20 and 120 minutes, in particular from 30 to 60 minutes, and preferably </= 1 mu m of copper is applied to at least one of the matching faces as "activation layer" which can no longer be detected after the treatment. |
