| 摘要 |
1. Process for manufacturing a semiconductor device, according to which on the surface of a single crystalline silicon substrat (1) v-shaped recesses (3) are formed, by oxydation of the surface an electrically insolating SiO2 -layer (4) is build, a polysilicon layer (5) is deposited thereon and a part of said silicon substrat (1) is removed building insolating wells (7) in the silicon layer (4), characterized in that the polysilicon layer (5) is thermically changed to a layer of single crystalline silicon by laser irridation and a single crystalline layer is expitaxially deposited theron building a layer (6). |
