| 摘要 |
PURPOSE:To sublime a high-melting point metal by a heat treatment that follows and to prevent the reliability of an integrated circuit device from lowering by a method wherein, after a polysilicide wiring is patterned, the polysilicide wiring is coated with an Si oxide film made by a sputtering method. CONSTITUTION:A polysilicide electrode wiring 105 in a polysilicide electrode wiring 107 having a two-layer construction of a poly Si film l04 and the high melting point silicide film 105 is patterned and afterward, the polysilicide wiring 105 is coated with an Si oxide film 109 made by a sputtering method. Por example, after a channel stopper 101 and a field oxide film 102 are formed on a P type Si substrate 100, a gate oxide film 103 is grown and after the phosphorus-doped poly Si film 104 is deposited, the molybdenumsilicide film 105 is deposited and after the polysilicide gate electrode 107 is formed by a photo etching method, an Si oxide film located at a region 108 which is used as a source and a drain is removed. Then, the Si oxide film 109 is deposited by a sputtering method, an N-type impurity is introduced in the region 109 which is used as a source and a drain and source and drain diffused layer regions 110 are formed.
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