| 摘要 |
PURPOSE:To inhibit generation of dislocation of crystal and to obtain semiconductor single crystal of high quality with high reproducibility in the preparation of a compound semiconductor single crystal by the liquid seal pulling method by regulating the thickness of the upper part of a cylindrical part of a jig for supporting a crucible to thinner thickness than the thickness of the lower part of the same cylindrical part. CONSTITUTION:A crucible 1 is housed and held in a high pressure vessel by a supporting jig 2, and melt 8 for the starting material of the crystal and a liquid sealing agent 9 are contained in the crucible 1. The crucible 1 is heated by a heater 6 interposing the supporting jig 2. In this state, a crystal 10 is pulled up with a pulling rod 3. The thickness of the upper part 2a of a cylindrical part of the supporting jig 2 for the crucible is made thinner than the thickness of a lower part 2b of the same cylindrical part. By this constitution, temp. difference between the upper portion and the lower portion in the crucible 1 caused by the small heat conductivity of the liquid sealing agent 9 is reduced. As the result, thermal stress in the crystal 10 to be formed is reduced and generation of dislocation in the crystal is inhibited. By this method, single crystals having high quality are obtd. |
