| 摘要 |
PURPOSE:To obtain a B-containing Al alloy for semiconductor wiring material in which occurrence of electromigration is prevented, by specifying a composition consisting of alloying elements such as Zr, Hf, V, Nb, Ta, Cr, Mo, W, etc., B, and Al. CONSTITUTION:The B-containing Al alloy for semiconductor wiring material has a composition consisting of, by weight, 0.002-0.7% of one or more alloying elements among Zr, Hf, V, Nb, Ta, Cr, Mo, W, etc., 0.002-0.5% B, and the balance Al with inevitable impurities and further containing, if necessary, 0.5-1.5% Si. In the above Al alloy, the occurrences of voids and hillocks due to the electromigration are prevented. The above Al alloy can be obtained by allowing prescribed amounts of above-mentioned alloying elements and high- purity crystalline B to melt in high-purity Al or Al-Si alloy in the air to undergo casting. After that, the resulting casting is machined in the above state to be formed into vacuum vapor deposition material or target sheet for sputtering for use in the formation of above-mentioned wiring.
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