| 摘要 |
PURPOSE:To enable the sensitivity of a photo-electric surface to be enhanced by substantially inhibiting sodium (Na) element to form a precipitation layer on the surface of input phosphor for forming a photo-electric surface. CONSTITUTION:Vacuum evaporated phosphor films 2, 3a made of cesium iodide serving as its basic body are deposited on an Al substrate 1. The thickness of film 2 is set to 200mum through evaporation in the ambience of Argon gas and that of film 3a is set to 10mum through vacuum evaporation of cesium iodide including only 10<-3> mol% of sodium iodide under high vacuum state below 1X10<-3> Pa. An indium-tin oxide conductive film 5 is formed on the film 3a through electron beam evaportion in the ambience of oxygen to provide an input phosphor surface. And the total amount of Na element contained in the surface layer of the input surface ranging 1mum depth the photo-electric surface side in the phosphor film is assigned to less than 10<-2> mol% in relation to the total amount of cesium iodide contained in the surface layer of the input surface. According to the above, substantially no precipitation layer of Na element appears on the surface subjected to the formation of the photo-electric surface on the input phosphor surface so that the sensitivity of the photoelectric surface may be enhanced, and particularly a significant effect can be expected when bialkali photo-electric surface is employed.
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