| 摘要 |
PURPOSE:To form a silicon epitaxial film of uniform thickness having electric resistance by a method wherein introduced gas is fed to the surface of a silicon single crystal substrate, which is rotated with the center of surface as an axis, using a plurality of fixed type nozzles, in such a manner that the gas becomes higher in density from the center part of the substrate on its edge on an arbitrary positional coordinate axis vertically crossing the reaction gas stream. CONSTITUTION:In a vapor phase epitaxial growing device, a silicon epitaxial film of uniform thickness having electric resistance is grown by feeding the reaction gas, which is introduced into a reaction tube 1 through a plurality of fixed type nozzles 7 and 9, to the surface of the silicon single crystal substrate 4 which is rotated with the center of the substrate as an axis in the specific density distribution. The center line 11 of the reaction gas emitted from a plurality of nozzles 7 and 9 is formed in parallel with each other or they are formed in sector form, and the density of the reaction gas in the center part of the silicon single crystal substrate is adjusted in such a manner that it is made lower than that of the edge part of the silicon single crystal substrate end part on the arbitrary positional coordinate axis which vertically crosses the gas stream.
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