| 摘要 |
PURPOSE:To obtain a step-free flat semiconductor device on the surface of a semiconductor substrate, to eliminate the stress of a passivation film 6 and to use the substrate as a substrate for forming a multilayer interconnection and a multilayer circuit by a method wherein oxygen is ion-implanted in parts of a metal filmadhetedon the semiconductor substrate. CONSTITUTION:A process for ion-implanting oxygen (a) in parts of a metal film 6, adhered on a semiconductor substrate 1 is provided. For example, a P-type source layer 2 and a P-type drain layer 3 are formed in the Ntype Si substrate 1 by an ion-implantation method and so on and after a gate oxide (insulating) fi1m 4 and a field oxide film 5 are formed by a thermal oxidation method, the metal layer 6' is adhered on the whole surface. Then, the parts to be used as metal wiring parts are covered with a masking material 7. After that, the implantation of oxygen ions is executed by an ion-implantation method wherein oxygen gas is used as a source. By this ion-implantation, metal oxide layers 8 are formed and electrically isolated from metal wirings 6 which are circuit wiring parts.
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