| 摘要 |
A process for forming a deposited film comprises: (a) the step of arranging a substrate having a portion comprising a material which becomes the crystal nucleus for formation of a deposited film or a material capable of forming selectively said crystal nucleus into a film forming space for formation of a deposited film; (b) the film forming step of introducing an activated species (A) formed by decomposition of a compound containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween and form a deposited film on said substrate; (c) the step of exposing the deposited film growth surface to a gaseous substance having etching action on the deposited film to be formed during the film forming step to apply etching action on said deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction. |
